ArticleMicromachines2026
Device-Level Modeling, Cross-Axis Analysis, and Optical Characterization of a Symmetric Triple-Layer MOEMS Accelerometer.
Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Enhancing the proof mass without enlarging the chip area or introducing structural asymmetry is a central challenge in the development of low-noise microelectromechanical system (MEMS) accelerometers. Here, we present a symmetric triple-layer MOEMS accelerometer and analyze its device-level sensitivity trade-off, cross-axis coupling behavior, and dynamic consistency between measurement and finite-element simulations. The proposed sensing element sandwiches one without-beam mass layer between two identical with-beam layers, thereby increasing the effective proof mass while preserving mirror symmetry. A lumped-parameter model is developed to explain the sensitivity trade-off among single-layer, asymmetric double-layer, and symmetric triple-layer configurations. Finite-element simulations are used to distinguish translational cross-axis coupling from rotational cross-axis coupling. The experimental characterization of one packaged triple-layer prototype demonstrates a mechanical sensitivity of 193.91 µm/(m/s
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