Evidence map›Paper›PMID 42653608›Full record

ArticleMicromachines2026

Electrical Characterization of Mesh-Structured Floating-Gate Neuromorphic Transistors with Varying Mesh Sizes.

Taehwan Koo, Hyeongjin Chae, Kangmin Yoo, Hyeonseok Jeong, Juyeong Chae, Dongyeop Kim, Jineui Park, Moongyu Jang

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Taehwan KooSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Hyeongjin ChaeSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Kangmin YooSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Hyeonseok JeongSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Juyeong ChaeSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Dongyeop KimSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Jineui ParkSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Moongyu JangSchool of Semiconductor & Display Technology, Hallym University, Chuncheon 24252, Republic of Korea.ORCID 0000-0003-4019-2564

Funding

Hallym University HRF-202512-005
6 · The paper itself

Abstract

This study investigates the influence of mesh-structured floating-gate (FG) geometry on the electrical and DC synaptic characteristics of flash-memory-based neuromorphic transistors. Devices with mesh sizes of 3 µm × 3 µm, 1 µm × 1 µm, 500 nm × 500 nm, and 200 nm × 200 nm were comparatively evaluated while maintaining the same channel dimensions. As the mesh size decreased, the perimeter-to-area (

Indexed as

electric field concentrationfloating gatemesh structureneuromorphic computingperimeter-to-Area (P/A) ratiosynaptic transistor

Identifiers

PMID42653608
PMCPMC13515329

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.