ArticleMicromachines2026
Design and Optimization of High-G Graphene MEMS Acceleration Sensor.
Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
High-g accelerometers are in high demand across sectors such as aerospace, defense, and industrial inspection. This paper presents a MEMS accelerometer based on graphene piezoresistors, designed for precise acceleration measurement under sudden impacts, intense vibrations, and extreme conditions, such as engine fault diagnosis and weapon impact testing. A step-by-step structural optimization and simulation analysis were conducted using finite-element simulation. Taking the peak strain at the beam root, the first-order natural frequency, and the maximum equivalent stress as optimization objectives, progressive parametric optimization was sequentially performed on four progressive architectures: a simple beam, a beam mass, a beam mass with stress concentration grooves, and a beam mass with stress concentration grooves and symmetric masses. The results indicate that the introduction of a central mass enhances the peak strain by more than 15 times compared to the simple beam. The addition of stress concentration grooves further increases the strain by approximately 30%. Finally, the incorporation of symmetric masses yields a further 9% strain enhancement while reducing cross-axis sensitivity by 5.6%, effectively suppressing off-axis interference. The final structure achieves maximized strain while maintaining a first-order natural frequency above 200 kHz, with the maximum equivalent stress staying within the allowable limit. This optimal comprehensive performance provides essential technical support for high-performance graphene-based accelerometers. In addition to the mechanical structural optimization, the graphene piezoresistors were treated as surface sensing regions at the beam-root locations, and the area-averaged longitudinal strain was extracted as the input of a piezoresistive transduction model. The simulated strain was converted to resistance variation and bridge output voltage using a graphene gauge-factor-based readout model incorporating contact-resistance effects, thereby providing a sensor-level electromechanical performance estimation for the proposed high-g accelerometer.
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