Evidence map›Paper›PMID 42646412›Full record

ArticleNanomaterials (Basel, Switzerland)2026

A SnO

Yuechao Wang, Xiongqiang Ma, Ruirong Wang, Junsheng Zhang

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Yuechao WangDepartment of Electronic Engineering, Taiyuan Institute of Technology, Taiyuan 030008, China.ORCID 0000-0002-6586-0728
Xiongqiang MaDepartment of Mining Engineering, Shanxi Institute of Energy, Taiyuan 030006, China.
Ruirong WangDepartment of Electronic Engineering, Taiyuan Institute of Technology, Taiyuan 030008, China.
Junsheng ZhangDepartment of Electronic Engineering, Taiyuan Institute of Technology, Taiyuan 030008, China.

Funding

Shanxi Provincial Department of Human Resources and Social Security 2024LJ008Shanxi Provincial Education Department 2025L126Taiyuan Institute of Technology 2024KJ004
6 · The paper itself

Abstract

ZnO is widely used as an electron transport layer in quantum-dot light-emitting diodes (QLEDs) because of its high electron mobility and suitable energy levels. However, rapid electron transport may cause excessive electron injection, leading to charge accumulation and parasitic recombination. SnO

Indexed as

bilayer electron transport layerelectron injectionleakage currentQLEDsSnO2/ZnO

Identifiers

PMID42646412
PMCPMC13515732

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.