Evidence map›Paper›PMID 42642409›Full record

ArticleNature communications2026

Dielectric stacking-engineered scalable reconfigurable transistor platform for adaptive logic circuits.

Pengfei Zhu, Chi Zhang, Jingbo Yang, You-Wei Guo, Shida Huo, Enxiu Wu, Fei Wang, Che-Yi Lin, Jyun-Hong Chen, Hongling Chu and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Pengfei Zhu *School of Microelectronics, Shanghai University, Shanghai, China.
Chi Zhang *School of Microelectronics, Shanghai University, Shanghai, China.
Jingbo Yang *School of Microelectronics, Shanghai University, Shanghai, China.
You-Wei GuoDepartment of Physics, National Chung Hsing University, Taichung, Taiwan.
Shida HuoState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin, China.
Enxiu WuState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin, China. enxiuwu@tju.edu.cn.ORCID http://orcid.org/0000-0001-6060-1180
Fei WangSchool of Microelectronics, Shanghai University, Shanghai, China.
Che-Yi LinDepartment of Applied Physics, Tunghai University, Taichung, Taiwan.
Jyun-Hong ChenNational Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, Taiwan.
Hongling ChuSchool of Microelectronics, Shanghai University, Shanghai, China.
Zhaorui LiuSchool of Microelectronics, Shanghai University, Shanghai, China.
Song ZhaoSchool of Microelectronics, Shanghai University, Shanghai, China.
Jun LiSchool of Microelectronics, Shanghai University, Shanghai, China.ORCID http://orcid.org/0000-0003-0124-1757
Mengjiao LiSchool of Microelectronics, Shanghai University, Shanghai, China. mjli@shu.edu.cn.ORCID http://orcid.org/0000-0003-4801-560X
Yen-Fu LinDepartment of Physics, National Chung Hsing University, Taichung, Taiwan. yenfulin@nchu.edu.tw.ORCID http://orcid.org/0000-0002-1545-9143
Jianhua ZhangSchool of Microelectronics, Shanghai University, Shanghai, China.

Funding

Ministry of Science and Technology, Taiwan (Ministry of Science and Technology of Taiwan) 112-2628-M-005-001-MY3
6 · The paper itself

Abstract

Although reconfigurable van der Waals devices featuring flexible logic transformation offer a promising strategy toward adaptable architectures to accommodate diverse computational demands, reliable polarity control and scalable integration remain challenging. Here, we demonstrate a reconfigurable field-effect transistor based on the scalable dielectric oxide-van der Waals quasi-floating-gate configuration, enabling nonvolatile polarity switching and multi-state programmability. Charge trapping engineering in an atomic-layer Al

Identifiers

PMID42642409
PMCPMC13507052

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.