Evidence map›Paper›PMID 42631091›Full record

ArticleACS nanoscience Au2026

Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory.

Yeji Lee, Soomin Kim, Seongmin Kim, Sungjun Kim, Seongjae Cho

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS nanoscience Au, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Yeji LeeDepartment of Semiconductor Engineering, Ewha Womans University, Seoul 03760, South Korea.
Soomin KimDepartment of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea.
Seongmin KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.ORCID https://orcid.org/0000-0002-9873-2474
Seongjae ChoDepartment of Semiconductor Engineering, Ewha Womans University, Seoul 03760, South Korea.ORCID https://orcid.org/0000-0001-8520-718X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Resistive-switching random-access memory (RRAM) has gained a great deal of attention as an emerging memory suitable for massive data storage media and synaptic device applications. For low-power operation capability, eliminating the necessity of current compliance, tunneling oxide can be inserted as a tunneling layer in the conventional RRAM devices. In this work, we have systematically investigated the effects of SiO

Indexed as

high on/off ratiolow-power operationmedium-temperature oxidationresistive-switching random-access memorySi-compatible memory

Identifiers

PMID42631091
PMCPMC13495463

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.