Evidence map›Paper›PMID 42627674›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Deciphering the Crystallinity-Dependent Sensitivity of Charge Injection in n-Channel Organic Transistors: Reliable Characterization and Optimized Performance.

Walid Boukhili, Chan Zhang, Jianeng Ma, Changwoo Yu, Chee Leong Tan, Huabin Sun, Zhihao Yu, Guangan Yang, Xiang Wan, Li Zhu and 6 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Walid BoukhiliCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0000-0002-5899-6803
Chan ZhangInstitute of Molecular Plus, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin, People's Republic of China.
Jianeng MaInstitute of Molecular Plus, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin, People's Republic of China.
Changwoo YuDivision of Advanced Materials and Engineering, Kongju National University, Chungcheongnam-do, Republic of Korea.ORCID https://orcid.org/0009-0008-9365-210X
Chee Leong TanCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0000-0002-1350-3577
Huabin SunCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0000-0002-8465-7151
Zhihao YuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0000-0002-9724-5033
Guangan YangCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.
Xiang WanCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0000-0001-6085-0603
Li ZhuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0000-0003-1583-2670
Yong XuGuangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, People's Republic of China.ORCID https://orcid.org/0000-0002-6800-234X
Liyang YuResearch Institute of Frontier Science Southwest Jiaotong University Chengdu, Chengdu, People's Republic of China.ORCID https://orcid.org/0000-0002-1203-2996
Ruipeng LiNational Synchrotron Light Source (NSLS II) Brookhaven National Laboratory Upton, New York, USA.ORCID https://orcid.org/0000-0001-8176-3138
Seung-Hoon LeeDivision of Advanced Materials and Engineering, Kongju National University, Chungcheongnam-do, Republic of Korea.ORCID https://orcid.org/0000-0002-0301-522X
Zhuping FeiInstitute of Molecular Plus, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin, People's Republic of China.ORCID https://orcid.org/0000-0002-2160-9136
Dongyoon KhimCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.ORCID https://orcid.org/0009-0003-1125-628X

Funding

Fundamental Research Funds for the Central UniversitiesKorea Government RS-2024-00403209Korea Government RS-2026-25489371National Synchrotron Light Source II DE- SC0012704NUPTSF NY221113
6 · The paper itself

Abstract

The performance and reliability of n-type organic field-effect transistors (OFETs) are strongly influenced by the interplay between semiconductor crystallinity and the metal/semiconductor interface. Here, we systematically investigate a series of diketopyrrolopyrrole (DPP)-based n-type polymers with identical backbones but varying side-chain architectures, resulting in varied long-range order. By comparing devices fabricated with conventional Au and low-work-function Al/Ti electrodes, we elucidate the synergistic effects of intrinsic polymer crystallinity and interfacial energetics on charge injection, transport, and operational stability. Temperature-dependent electrical measurements and trap analyses demonstrate that contact resistance, rather than intrinsic bulk transport, dominates the observed mobility differences between polymers of moderate and high crystallinity. Optimized Al/Ti contacts mitigate these interfacial limitations, enabling a transition from contact-limited to channel-limited transport and significantly improving environmental and operational stability. These findings establish a quantitative framework linking crystalline order, injection efficiency, and device reliability. This framework provides critical design guidelines for the evaluation and optimization of high-performance n-type organic semiconductors.

Indexed as

contact resistancecrystallinity of conjugated polymersenvironmental and operational stabilitylow‐temperature measurementsN‐type organic transistors

Identifiers

PMID42627674
PMCPMC13496279

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.