ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.
Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Conventional ovonic threshold switching (OTS) chalcogenides face a fundamental scaling limit for selector-only memory (SOM), because aggressive thickness scaling increases leakage current and hinders reliable low voltage operation. Here, this trade-off can be overcome by exploiting the unique materials characteristics of the Mg─Te chalcogenide system. Guided by the bonding ionicity map and supported by density functional theory calculations, Mg─Te is identified as an optimal telluride material whose highly ionic bonding is associated with deeper trap levels, a large memory window of 1.75 V, and suppressed leakage in 20 nm devices. Structural analyses and multiscale simulations suggest that the spontaneous phase separation in Mg
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