Evidence map›Paper›PMID 42581741›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

A Universal van der Waals Tunneling Injector for Monolayer CMOS.

Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin and 8 more

Abstract read
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Hanbin ChoDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.ORCID https://orcid.org/0009-0000-0379-4158
Jing HuangBeijing Computational Science Research Center, Beijing, China.ORCID https://orcid.org/0000-0003-4714-5744
Seonguk YangDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
Subin ImCenter for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Republic of Korea.ORCID https://orcid.org/0009-0006-5263-6184
Sangwoo ParkDepartment of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
Jeongin YeoDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.
Sungyeon KimDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.
Gilhwan DoDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.ORCID https://orcid.org/0009-0002-6782-8534
Wenxuan ZhuDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
Soobeom ShinGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0005-6687-8232
Jongwon LeeSemiconductor R&D Center, Samsung Electronics Co., Ltd., Hwaseong, Republic of Korea.ORCID https://orcid.org/0000-0002-1735-2497
Yongjoon ShinSemiconductor R&D Center, Samsung Electronics Co., Ltd., Hwaseong, Republic of Korea.ORCID https://orcid.org/0000-0001-9977-891X
Do-Sun LeeSemiconductor R&D Center, Samsung Electronics Co., Ltd., Hwaseong, Republic of Korea.
Hu Young JeongGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0002-5550-5298
Tae-Eon ParkCenter for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0003-0192-2771
Jun KangBeijing Computational Science Research Center, Beijing, China.ORCID https://orcid.org/0000-0003-4788-0028
Kyungmin KoDivision of AI Semiconductor, Yonsei University, Wonju, Republic of Korea.ORCID https://orcid.org/0009-0003-8775-7769
Joonki SuhDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.ORCID https://orcid.org/0000-0002-0221-8447

Funding

Ministry of Education RS-2025-02633565Ministry of Science and ICT RS-2024-00336695Ministry of Science and ICT RS-2024-00444182Ministry of Science and ICT RS-2025-23323228Ministry of Science and ICT RS-2025-23323754Ministry of Science and ICT RS-2026-25542094National Natural Science Foundation of China 12393831National Research Council of Science & Technology (NST) GTL24041-000Samsung Electronics Co., Ltd. IO260317-16019-01
6 · The paper itself

Abstract

Two-dimensional (2D) semiconductors are poised to extend logic technology to the atomic-thickness limit, yet monolayer complementary metal-oxide-semiconductor (CMOS) has been largely hampered by polarity-dependent, thermionic-emission-dominated contacts that preclude a unified injection solution. Here, we introduce degenerately doped, crystalline SnSe

Indexed as

2D semiconductorshigh‐gain invertermonolayer CMOSSnSe2tunneling injection

Identifiers

PMID42581741
PMCPMC13660818

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.