Evidence map›Paper›PMID 42573590›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Unipolar Barrier Near-Infrared 2D Photodetectors for 3D Image Sensors.

Jung Pyo Hong, Sang-Jun Kim, Jisu Jang, Je-Jun Lee, Seong-Jun Han, Eungseon Yeon, Jung Woo Kim, Jongtae Ahn, Sang Yeon Kim, Hyun Woo Ko and 12 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

22 authors.

Jung Pyo HongCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.ORCID https://orcid.org/0009-0005-1238-7139
Sang-Jun KimCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.ORCID https://orcid.org/0009-0002-9211-5843
Jisu JangDepartment of Electric Engineering, Display & Semiconductor Engineering, Pukyong National University, Busan, Republic of Korea.
Je-Jun LeeCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Seong-Jun HanCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Eungseon YeonCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.ORCID https://orcid.org/0009-0004-6655-4724
Jung Woo KimCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Jongtae AhnDepartment of Physics, Changwon National University, Changwon, Republic of Korea.ORCID https://orcid.org/0009-0006-6778-8113
Sang Yeon KimCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Hyun Woo KoCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Sunghyun HanCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.ORCID https://orcid.org/0009-0002-1461-8728
Seung Ah LeeDepartment of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea.
Paul Hongsuck SeoDepartment of Computer Science and Engineering, Korea University, Seoul, Republic of Korea.
Young-Woo SuhDepartment of Ophthalmology, Korea University College of Medicine, Guro Hospital, Seoul, Republic of Korea.
Kimoon LeeDepartment of Physics, Kunsan National University, Gunsan, Republic of Korea.ORCID https://orcid.org/0000-0002-5989-5633
Gunuk WangKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0001-6059-0530
Dong-Guang ZhengDepartment of Electronic and Communication, Information Engineering College, Hangzhou Dianzi University, Hangzhou, China.
Sunghee HongHologram Research Center, Korea Electronics Technology Institute (KETI), Seoul, Republic of Korea.
Sangin HahnCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Seon Kyu YoonSpatial Optical Information Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju, Republic of Korea.ORCID https://orcid.org/0000-0002-5050-4675
Min-Chul ParkCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.ORCID https://orcid.org/0000-0002-8575-085X
Do Kyung HwangCenter for Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.ORCID https://orcid.org/0000-0001-8736-9262

Funding

Global Joint Research Program funded by the Pukyong National University 202505820001Korea Institute of Science and Technology (KIST) Institution Program 26E0002Korea Institute of Science and Technology (KIST) Institution Program 26V0500-26-P019National Research Foundation of Korea (NRF) 2020R1F1A1070009National Research Foundation of Korea (NRF) RS-2024-00461204National Research Foundation of Korea (NRF) RS-2026-25478068Technology Innovation Program funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) 02316245
6 · The paper itself

Abstract

Photodetectors sensitive to the near-infrared (NIR) range are of great importance for applications in machine vision, autonomous driving, and three-dimensional (3D) imaging under low-light or adverse weather conditions. Recently, two-dimensional (2D) semiconductors have emerged as promising light-absorbing materials for NIR detection. However, the inevitable majority-carrier injection from the electrode fundamentally leads to high dark current and poor light-detection capability, which has constrained the development of 2D semiconductor photodetectors so far. Here, we demonstrate a high-detectivity NIR photodetector based on a MoTe

Indexed as

2D materials3D imagingphotodetectorsunipolar barriers

Identifiers

PMID42573590
PMCPMC13455832

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.