Evidence map›Paper›PMID 42566547›Full record

ArticleScience advances2026

Ferroelectric control of the Mott insulator-topological metal transition.

Mengmeng Niu, Peng-Jie Guo, Yicheng Ma, Weikang Zhou, Chun Huang, Gege Yang, Xu Wu, Wei Ji, Jingsi Qiao, Yeliang Wang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Mengmeng NiuSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.ORCID 0009-0007-1053-1664
Peng-Jie GuoBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.ORCID 0000-0003-2705-612X
Yicheng MaSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.
Weikang ZhouSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.ORCID 0009-0005-0190-8568
Chun HuangSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.ORCID 0009-0008-5030-7568
Gege YangSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.
Xu WuSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.ORCID 0000-0002-2252-322X
Wei JiBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.ORCID 0000-0001-5249-6624
Jingsi QiaoSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.ORCID 0000-0001-6464-5500
Yeliang WangSchool of Integrated Circuits and Electronics, School of Multidisciplinary Science, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.ORCID 0000-0002-8896-0748

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Correlated and topological phases often coexist or compete in van der Waals materials, yet achieving an electrically switchable and reversible conversion between them remains a substantial challenge. Such control is crucial for understanding their interplay and enabling nonvolatile, low-power topological electronics. Here, we propose and demonstrate a polarization-controlled route to switch between Mott insulator and topological metal in ferroelectric-Mott heterostructures. In α-In

Identifiers

PMID42566547
PMCPMC13450317

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.