Evidence map›Paper›PMID 42557949›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Metal Oxide Nano-Interface Boosting the Deep Ultraviolet Adjustable Noise-Filtering In-Sensor Computing.

Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Zhongshi JuState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, P.R. China.ORCID https://orcid.org/0009-0008-3246-1166
Peng LiState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, P.R. China.ORCID https://orcid.org/0000-0002-0933-2592
Jingsong YuanState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, P.R. China.
Boyuan YuUniversity of Strasbourg & CNRS, ISIS & icFRC, Strasbourg, France.ORCID https://orcid.org/0009-0005-7191-2503
Bin HanUniversity of Strasbourg & CNRS, ISIS & icFRC, Strasbourg, France.
Yusheng ChenUniversity of Strasbourg & CNRS, ISIS & icFRC, Strasbourg, France.ORCID https://orcid.org/0000-0001-6593-5155
Jiangang MaState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, P.R. China.ORCID https://orcid.org/0000-0002-8142-2410
Haiyang XuState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, P.R. China.ORCID https://orcid.org/0000-0002-9457-4552
Yichun LiuState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, P.R. China.ORCID https://orcid.org/0000-0002-8628-6112
Paolo SamorìUniversity of Strasbourg & CNRS, ISIS & icFRC, Strasbourg, France.ORCID https://orcid.org/0000-0001-6256-8281

Funding

Agence Nationale de la Recherche through the Interdisciplinary Thematic Institute SysChem via the IdEx Unistra ANR-10-IDEX-0002Investissement d'Avenir, the Foundation Jean-Marie Lehn and the Institut Universitaire de FranceNational Key Research and Development Program of China 2021YFA0716404
6 · The paper itself

Abstract

Long-afterglow light-emitting devices (LALEDs), which combine the capabilities of sensing, memory, processing, and display integration, allow for the simultaneous implementation of optical and electrical in-sensor computing. However, the inherently low conductivity of conventional deep-ultraviolet (DUV) responsive materials hinders their use in the DUV-responsive LALEDs (DUV-LALEDs). Herein, we demonstrate that sol-gel-fractured indium-magnesium oxide (InMgO) concurrently exhibits ideal nano-interface for DUV photon absorption and semiconductor crystal for efficient charge transport via hopping, enabling to reach high mobility (0.6 cm

Indexed as

deep ultravioletin‐sensor computinglong‐afterglow light‐emitting devicesmetal oxidenano‐interface

Identifiers

PMID42557949
PMCPMC13648922

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.