Evidence map›Paper›PMID 42557847›Full record

ReviewSmall methods2026

Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications.

Jiaojiao Zhang, Yichao Dai, Long Zhou, Qin Lu, Kui Dang, Yachao Zhang, Jincheng Zhang, Yue Hao

Abstract readReview
PubMed Full text at PMC Publisher
In one paragraph

Review in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Jiaojiao ZhangState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, China.
Yichao DaiSchool of Advanced Materials and Nanotechnology, Xidian University, Xi'an, China.ORCID https://orcid.org/0009-0002-7079-5665
Long ZhouState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, China.ORCID https://orcid.org/0009-0005-3543-1104
Qin LuKey Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi'an University of Posts & Telecommunications, Xi'an, China.ORCID https://orcid.org/0009-0007-8211-0068
Kui DangState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, China.
Yachao ZhangState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, China.
Jincheng ZhangState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, China.
Yue HaoState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, China.

Funding

Fundamental and Interdisciplinary Disciplines Breakthrough Plan of the Ministry of Education of China JYB2025XDXM105Fundamental Research Funds for the Central Universities XJSJ26059Interdisciplinary Cultivation Program of Xidian University 21103240003National Natural Science Foundation of China 62421005National Natural Science Foundation of China 62525402Shaanxi Province Science and Technology Rising Star ProgramXidian University Specially Funded Project for Interdisciplinary Exploration TZJHF202519
6 · The paper itself

Abstract

Scandium-doped aluminum nitride (ScAlN) has emerged as a wide-bandgap ferroelectric material with exceptional potential for next-generation electronic devices due to its tunable polar properties, high breakdown field, and strong spontaneous polarization. Compared to conventional nitride semiconductors, there is still a gap in a comprehensive overview of the connection between material growth and device application. Herein, we summarize the development in material growth, fundamental properties, and device applications of ScAlN. We evaluate growth techniques and highlight their impact on crystallinity, defect density, and underlying mechanisms. More importantly, we discuss the integration of ScAlN and challenges in the advanced devices, including power electronic devices, artificial synapses, resonators, and filters. This perspective provides a strategic insight for future research, aiming to accelerate the development of high-performance, multifunctional ScAlN-based devices.

Indexed as

deviceferroelectricitygrowth technologypiezoelectricityScAlN

Identifiers

PMID42557847
PMCPMC13555648

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.