ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Barrier-Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS
Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Authors and funding
16 authors.
Funding
Abstract
Atomically thin transition-metal dichalcogenides (TMDs) are promising channel materials for low-power logic. However, the absence of scalable and region-selective doping techniques leads to excessive local resistances that hinder the technological readiness of 2D transistors. Here, a barrier-assisted NH
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Registered trials
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