ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Grain Boundary Enabled Diamond Memristor.
Guangkai Sun, Xing Li, Wentao Huang, Yuetong Han, Weiwei Yan, Xiaodong Wang, Ying Guo, Delu Chen, Shaobo Cheng, Chongxin Shan
Abstract read
In one paragraphArticle in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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5 · Who and what moneyAuthors and funding
10 authors.
Guangkai SunHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.
Xing LiHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.ORCID https://orcid.org/0000-0002-4524-600X Wentao HuangHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.ORCID https://orcid.org/0000-0001-6279-1133 Yuetong HanHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.
Weiwei YanHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.
Xiaodong WangHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.
Ying GuoHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.ORCID https://orcid.org/0000-0002-8188-4818 Delu ChenHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.
Shaobo ChengHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.ORCID https://orcid.org/0000-0001-8791-5315 Chongxin ShanHenan Key Laboratory of Diamond Materials and Devices, Key Laboratory of Integrated Circuit, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou, China.ORCID https://orcid.org/0000-0001-7119-5325 Funding
International Science and Technology Cooperation in Henan Province 261111521100National Natural Science Foundation of China 12274371National Natural Science Foundation of China 52572052National Natural Science Foundation of China 62271450Science and Technology Innovation Leading Talent Support Program of Henan Province 254000510060Young Elite Scientists Sponsorship Program by CAST 2023QNRC001
6 · The paper itselfAbstract
Diamond has been recognized as the ultimate semiconductor due to its ultra-wide bandgap, exceptional carrier mobility, high breakdown voltage, and superior thermal conductivity. However, its application in memristors is significantly limited by challenges in modulating its electrical conductivity and its chemical stability. Here, by leveraging the rapid metal-diamond reactions at diamond grain boundaries (GBs), we constructed vertical ion migration channels along the GBs and realized the nonvolatile resistive switching behavior in polycrystalline diamond (Poly-D). The diamond memristor presents a high switching ratio (∼10
Indexed as
conductive filamentdiamondhigh‐temperature nonvolatile memristormetal‐diamond interfacial reactionneuromorphic computing
Identifiers
PMID42536036
PMCPMC13579084
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