Evidence map›Paper›PMID 42533674›Full record

ArticleSmall methods2026

Suppressing Intrinsic Defects via Ag Doping Enables High-Performance InSe Field-Effect Transistors.

Zhenhua Wang, Zheng Zhang, Hao Ji, Hengji Li, Zonghao Wang, Shanbin Liu, Jing Chen, Xiaoshuang Chen, Mingyuan Sun, Tian-Ling Ren and 3 more

Abstract read
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In one paragraph

Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Zhenhua WangInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Zheng ZhangInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Hao JiInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Hengji LiInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Zonghao WangInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Shanbin LiuInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Jing ChenInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Xiaoshuang ChenInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Mingyuan SunInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Tian-Ling RenSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China.
Min JinCollege of Materials, Shanghai Dianji University, Shanghai, China.ORCID https://orcid.org/0000-0001-7763-0869
Yu ZhangInstitute of Marine Science and Technology, Shandong University, Qingdao, China.
Lin HanInstitute of Marine Science and Technology, Shandong University, Qingdao, China.ORCID https://orcid.org/0000-0003-0461-2031

Funding

National Natural Science Foundation of China 62571304Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions TP2022122Shanghai Academic Research Leader 23XD1421200Space Application System of China Manned Space Program KJZ-YY-NCL405
6 · The paper itself

Abstract

InSe is a highly promising material for the next-generation nanoelectronics due to unique optoelectronic and electronic performance. However, the presence of intrinsic defects plays a detrimental role in InSe field-effect transistors (FETs) and photodetectors, which causes carrier scattering and degrades performance. Herein, we demonstrated an efficient Ag doping strategy in bulk InSe and developed the high-performance Ag-doped InSe FET. Detailed material structural characterization reveal that the doped Ag atoms are filled into Se vacancies, effectively suppressing Se atoms volatilization and improving the crystallinity of Ag-doped InSe. The enhanced lattice structure can effectively suppress carrier scattering and promote electron transport, greatly improving the electrical and photoelectrical performance of multilayer device. Ag-InSe FET presents both significantly superior electrical (three ∼ ten times higher field-effect mobility) and photoelectrical (ten ∼ thousand times higher responsivity) performance compared to undoped InSe and other two dimensional (2D) intrinsic materials devices. This work opens a valuable defect suppressing way to enhance 2D device performance.

Indexed as

Ag dopingdefect suppressingfield‐effect transistorInSeintrinsic defect

Identifiers

PMID42533674
PMCPMC13555667

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.