ArticleSensors (Basel, Switzerland)2026
Radiation-Tolerant PbS CQD Thin-Film Photodiode-Based SWIR Image Sensors.
Article in Sensors (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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7 authors.
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Abstract
Short-wavelength infrared (SWIR) image sensors are of increasing interest for space applications, where ionizing radiation can significantly impact device performance. PbS colloidal quantum dot (CQD)-based thin-film photodiodes (TFPDs) are promising candidates due to their spectral tunability and compatibility with CMOS integration. However, their radiation response remains insufficiently understood. We investigated the effects of X-ray irradiation on PbS CQD-based SWIR TFPDs and image sensors up to a total ionizing dose of 220 krad. The results suggest that X-ray irradiation induces ligand-dependent modulation of the trap-state in PbS CQD films, leading to reduced recombination and enhanced carrier lifetime. Consequently, the TFPDs exhibit decreased dark current and improved external quantum efficiency (EQE), reaching 44.2% at 1420 nm. PbS CQD-based SWIR image sensors maintain stable operation after irradiation until 220 krad, achieving an EQE of 33.1%. These results provide an initial assessment of PbS CQD-based SWIR image sensors under X-ray total ionizing dose (TID) exposure, highlighting the importance of ligand-dependent CQD surface chemistry towards SWIR photodetectors in space applications.
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