ArticleMaterials (Basel, Switzerland)2026
Junction Formation and Leakage Current Suppression in Planar High-Purity Germanium Detectors for Low-Energy X-Ray Detection.
Article in Materials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This study addresses the need for dark-current control and stable current response in planar high-purity germanium (HPGe) detectors for low-energy X-ray detection. A device fabrication strategy based on the coupled optimization of near-surface treatment, N/P junction formation, and guard-ring electrode design is proposed. Unlike previous studies that mainly focused on contact-layer fabrication, segmented electrode structures, low-noise readout, or response simulation, this work investigates low-damage near-surface construction, N-type and P-type contact-layer formation, and edge-related leakage-current regulation as an interconnected processing route. The relationship among the near-surface state, junction quality, electrode configuration, and edge-related leakage current is emphasized. Chemical mechanical polishing (CMP) reduced the surface roughness Sa of the HPGe crystal to 6.68 nm, providing a low-damage near-surface foundation for subsequent junction fabrication. On this basis, the optimized Li thermal diffusion process, namely 0.5 Å s
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