ArticleMicromachines2026
The Influence of Gap Angle on the Transport Characteristics of Split-Gate AlGaN/GaN Heterostructure Field-Effect Transistors.
Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
In this work, split-gate (SG) AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gap angles were fabricated. The effect of the gap angle on the transport characteristics of these SG devices was investigated via measurement and analysis of their direct-current electrical properties. The results show that varying the gap angle significantly influences the channel current and further modulates the turn-off voltage of the devices. Theoretical analysis indicated that a change in gap angle directly alters the length of the gap region and affects the conduction channel effective width (Weff) through geometric effects, thereby modifying the channel current. In addition, the gap angle affects the total amount and distribution of additional polarization charges underneath the gate, which influences the polarization Coulomb field (PCF) scattering intensity and thus modulates the electron mobility of the devices. These findings provide a new direction for the structural optimization of SG AlGaN/GaN HFETs and offer a valuable reference for further improving the performance of SG devices.
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