Aging-Enhanced High-Performance Zinc Tin Oxide Transistors and Exploration in Illumination Interface Stability.

Bing Yang, Qiao Guo, Hongmin Li, Gang He, Shanshan Jiang, Longwei He, Xiang Li, Peng Yu

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Bing YangSchool of Intelligent Manufacturing, Anhui University of Applied Technical, Hefei 230011, China.ORCID 0009-0004-3760-1587

Qiao GuoSchool of Computer and Information Technology, Anhui University of Applied Technical, Hefei 230011, China.

Hongmin LiHefei BOE Optoelectronics Technology Co., Ltd., Hefei 230011, China.

Gang HeRadiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China.

Shanshan JiangRadiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China.

Longwei HePioneer Film Materials (Anhui) Co., Ltd., Hefei 230011, China.

Xiang LiSchool of Intelligent Manufacturing, Anhui University of Applied Technical, Hefei 230011, China.

Peng YuSchool of Intelligent Manufacturing, Anhui University of Applied Technical, Hefei 230011, China.

Funding

Enterprise cooperation project No.2025hxkt2025058, No.2023yjjpkc06, 2023scrjcx001,2024xjjxyjy38, 2026hxkt083,2026hxkt084National Natural Science Foundation of China No.11774001Natural Science Research Project of Colleges and Universities in Anhui Province No.2025AHGXZK20019, 2024AH050882, 2024AH050892, 2024AH050899, 2024AH040131Research and Innovation Platform Project of Anhui Vocational Technology University 2024xjpt02Research Project of the China Vocational Education Society ZJS2026ZD

6 · The paper itself

Abstract

In this work, a post-annealing rapid cooling and aging treatment process is innovatively proposed to build high-performance zinc tin oxide (ZTO) thin-film transistors. The relaxation effect on the abundant oversaturated oxygen vacancy deep-level traps contributes to the shallow donor formation during the aging period. The TFTs aged in an air environment for 10 days possess significantly improved electrical performance, including a clearly increased on/off current ratio of 7 × 10

Indexed as

aging-enhanced thin-film transistorsgrain boundary defects relaxation modelillumination interface stability

Identifiers

PMID42506495

DOI10.3390/nano16140861

PMCPMC13414651

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.