Hysteresis-Induced Performance Variations and Interfacial Charge Trapping Characteristics in Carbon Nanotube Thin-Film Transistors.

Mingyu Liu, Bo Lai, Hannian Wang, Lele Wu, Wendi Wu, Kai Xu, Yuanchun Zhao

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

7 authors.

Mingyu LiuState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Bo LaiState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Hannian WangState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Lele WuState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Wendi WuState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Kai XuState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.ORCID 0000-0002-4653-7853

Yuanchun ZhaoState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.ORCID 0000-0002-8346-1739

Funding

Hebei Province Higher Education Science and Technology Research Project CXZX2026034National Natural Science Foundation of China 51772261

6 · The paper itself

Abstract

Carbon nanotube (CNT) networks are promising candidate channel materials for thin-film transistors (TFTs). However, the charge trapping characteristics underlying the gate hysteresis effect still remain unclear. Herein, high-performance CNT TFTs with good consistencies were fabricated to investigate the hysteresis-induced performance variations and the dynamic charge trapping/releasing behaviors at different gate biases. Both the subthreshold and suprathreshold characteristics of the TFTs are remarkably changed under different gate sweeping directions. The origin of gate hysteresis was illustrated by comparing the effects of gas desorption and selective re-adsorption, and the adsorbed O

Indexed as

charge trappingCNT networksdynamic characteristicshysteresisthin-film transistors

Identifiers

PMID42506482

DOI10.3390/nano16140847

PMCPMC13414926

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.