Evidence map›Paper›PMID 42502177›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.

Min Su Kang, Jong Min Joo, Jun Young Choi, Ji Eun Park, Dong Hyun Kim, Jin Suk Oh, Tae Geun Kim

Abstract read
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Min Su KangSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Jong Min JooSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Jun Young ChoiDepartment of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea.
Ji Eun ParkSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Dong Hyun KimSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Jin Suk OhSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Tae Geun KimSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0001-6211-1134

Funding

Ministry of Science and ICT RS-2024-00407199National Research Foundation of KoreaSamsung Electronics Co., Ltd IO260316-15986-01
6 · The paper itself

Abstract

Ovonic threshold switching (OTS) selector devices are critical for suppressing sneak-path leakage current and ensuring cell selectivity in high-density crosspoint memory arrays, while enabling nanosecond-scale switching and low-power operation. However, amorphous chalcogenide-based OTS selectors face challenges including limited durability, poor thermal stability, and an inherent trade-off between switching speed and threshold voltage (V

Indexed as

1S–1R architecturecrosspoint arraynitrogen‐doped GeTeSOTS selectorovonic threshold switchingphase‐change memory

Identifiers

PMID42502177
PMCPMC13592409

What OpenQuestion holds

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Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.