In one paragraphArticle in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registryThe trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
3 · Its place in the literatureWho cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
4 · The recordCorrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what moneyAuthors and funding
23 authors.
Changhwan KimDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.ORCID 0009-0002-4868-3149 Chuqiao ShiDepartment of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA.ORCID 0000-0001-6372-5445 Mingyu JangGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.ORCID 0009-0006-5008-1365 Wenxuan ZhuDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Subin ImCenter for Semiconductor Technology, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.ORCID 0009-0006-5263-6184 Minhyuk ChoiStrategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea.ORCID 0009-0001-1995-9567 Gayeon LeeDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Seonguk YangDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Xinyan LiDepartment of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA.ORCID 0000-0002-3005-0151 Namwook HurDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.ORCID 0009-0007-2410-4196 Miso KimAdvanced Materials and Semiconductor Engineering, Materials Science and Chemical Engineering, Hanyang University ERICA, Ansan 15588, Republic of Korea.ORCID 0009-0005-2157-3582 Srinibas NandiDepartment of Computational and Data Sciences, Indian Institute of Science, Bangalore 560012, India.ORCID 0000-0002-4892-9279 Melike ErdiMaterials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA.ORCID 0009-0007-5314-2976 Phani MotamarriDepartment of Computational and Data Sciences, Indian Institute of Science, Bangalore 560012, India.ORCID 0000-0003-3160-7334 Seung-Cheol LeeDepartment of Energy Science and Engineering, Sunchon National University, Suncheon 57922, Republic of Korea.ORCID 0000-0002-9741-6955 Satadeep BhattacharjeeIndo Korea Science and Technology Center, Bangalore 560065, India.
Seth Ariel TongayMaterials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA.ORCID 0000-0001-8294-984X Seungwoo SongStrategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea.ORCID 0000-0002-8524-3444 Tae-Eon ParkCenter for Semiconductor Technology, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.ORCID 0000-0003-0192-2771 Yimo HanDepartment of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA.ORCID 0000-0003-0563-4611 Bonggeun ShongAdvanced Materials and Semiconductor Engineering, Materials Science and Chemical Engineering, Hanyang University ERICA, Ansan 15588, Republic of Korea.ORCID 0000-0002-5782-6300 Joonki SuhDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.ORCID 0000-0002-0221-8447 Funding
NTP INFORMATION SYSTEMS SUPPORT27305C0011 · NIEHS · Z-TECH CORPORATION · 2007 to 2009
$4.3MPROVIDE RABBITS, RATS, MICE, HAMSTERS, GERBILS, GUINEA PIGS27307C0011 · NIEHS · PI BOLEN, WAYNE · 2007 to 2007
$500kNIEHS NIH HHS 27305C0011NIEHS NIH HHS 27307C0011NIEHS NIH HHS 27398C0011
6 · The paper itselfAbstract
Van der Waals (vdW) epitaxy can integrate lattice-mismatched crystals with atomically sharp, pristine interfaces. However, translating this concept to atomic layer deposition (ALD), a standard for low-temperature, layer-by-layer growth, remains challenging because precursors adsorb transiently on chemically inert vdW basal planes, leading to physisorption-limited nucleation and poor crystalline ordering. Here, we introduce diffusion-steered epitaxial ALD (Epi-ALD), redefining vdW surfaces as programmable kinetic-thermodynamic landscapes and demonstrate highly crystalline tellurium at 150°C. Epi-ALD couples surface-potential-encoded physisorption with long-range diffusion to promote ordered nucleation and epitaxial alignment. This "soft" pathway enables strain-free tellurium epitaxy with a pristine vdW gap (∼1.4 angstrom) despite lattice mismatch (>3.6%) and generalizes across multiple vdW templates. Retaining hallmark advantages of ALD including scalability and uniformity, we further program in-plane orientation through vdW symmetry engineering to achieve quasi-single-crystalline tellurium films with pronounced anisotropy and a chiral anomaly signature. Our work establishes a universal, low-thermal-budget approach for integrating vdW materials and expands the scope of epitaxy within the ALD paradigm.
Identifiers
PMID42497268
PMCPMC13398532
What OpenQuestion holds
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LicenceCC BY-NC
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