Evidence map›Paper›PMID 42493603›Full record

ArticleNature materials2026

Van der Waals surface reconstruction for oriented epitaxial growth of two-dimensional metallic oxides.

Mei Zhao, Kenan Zhang, Shaowen Xu, Yuyin Li, Yuan Lu, Jiawen You, Chenchen Huang, Minting Lei, Zhien Wang, Yunyue Zhu and 11 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

21 authors.

Mei Zhao *Zhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China.
Kenan Zhang *Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA. kenzhang@mit.edu.ORCID http://orcid.org/0000-0003-1343-6068
Shaowen Xu *School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China.ORCID http://orcid.org/0009-0009-1274-5521
Yuyin Li *Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA, USA.
Yuan Lu *Zhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China.
Jiawen You *Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China.
Chenchen HuangZhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China.
Minting LeiZhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China.
Zhien WangDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0002-6120-1952
Yunyue ZhuDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
Tianyi ZhangDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0002-8998-3837
Charles B MusgraveMaterials and Process Simulation Center, California Institute of Technology, Pasadena, CA, USA.
Jiangtao WangDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0001-7323-4690
Shuang PanZhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China.
Chao ZouZhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China.
Zhengtang LuoDepartment of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China. keztluo@ust.hk.ORCID http://orcid.org/0000-0002-5134-9240
Ning DaiState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0002-6164-4331
William A GoddardMaterials and Process Simulation Center, California Institute of Technology, Pasadena, CA, USA.ORCID http://orcid.org/0000-0003-0097-5716
Shun WangZhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China. shunwang@wzu.edu.cn.ORCID http://orcid.org/0000-0001-5305-5134
Jing KongDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA. jingkong@mit.edu.ORCID http://orcid.org/0000-0003-0551-1208
Lijie ZhangZhejiang International Joint Laboratory of Optical Functional Materials, Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China. ljzhang@wzu.edu.cn.ORCID http://orcid.org/0000-0002-1123-7156

Funding

National Science Foundation (NSF) award no. 2527588Semiconductor Research Corporation (SRC) award no. 145105-21913United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Laboratory (U.S. Army Research Laboratory) W911NF2320057United States Department of Defense | U.S. Air Force (United States Air Force) FA2386-24-1-4049
6 · The paper itself

Abstract

Hybrid integration of two-dimensional single-crystalline metal oxides, including semiconductors, dielectrics, ferroelectrics and ferromagnetics, with silicon circuits enables functionalities such as spintronics and neuromorphic and quantum computing, forming a key part of the 'More-than-Moore' roadmap. However, synthesizing two-dimensional metal oxide single-crystal films has remained challenging. Here we report a van der Waals surface reconstruction of mica for the general large-scale, unidirectional growth of two-dimensional metal oxides (where M = Co, Fe, Ni, Mn) and their doped counterparts, which seamlessly coalesce into single-crystalline films. Quantum mechanics calculations reveal that reconstructing mica's oxygen atomic plane is critical for achieving the single-crystal epitaxy of these two-dimensional metal oxides. As an example, centimetre-scale two-dimensional Fe-doped CoO single-crystalline films were grown and exhibit room-temperature ferromagnetic semiconductor properties with a high Curie temperature of up to 430 K. These results demonstrate the power of this synthesis strategy, enabling the exploration of two-dimensional metal oxides for quantum physics and spintronics devices.

Identifiers

PMID42493603

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