ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Volatile ZrO
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park and 4 more
Abstract read
In one paragraphArticle in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registryThe trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
3 · Its place in the literatureWho cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
4 · The recordCorrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what moneyAuthors and funding
14 authors.
Taegyu KwonDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Moonseek JeongDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Su In HwangSchool of Advanced Materials and Engineering, Sungkyunkwan University (SKKU), Seoul, Republic of Korea.
Geun Hyeong ParkDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0002-2520-6166 Joonyong KimDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID https://orcid.org/0009-0007-9939-4001 Hyojun ChoiDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID https://orcid.org/0009-0002-8445-903X Hyeong Seok ChoiDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Da Hyun KimDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Dong Hee HanDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0001-6446-0223 Ju Yong ParkDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Seungho BaekDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Dong Hyun LeeDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0002-2570-2485 Min Hyuk ParkDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0001-6333-2668 Funding
Korean Ministry of Science and ICT RS-2024-00406897Korean Ministry of Science and ICT RS-2025-02654040
6 · The paper itselfAbstract
Physical reservoir computing requires nonlinear response, fading memory, and rich transient state diversity, yet conventional nonvolatile memories often rely on explicit reset operations or long relaxation times. ZrO
Indexed as
antiferroelectric tunnel junctionmemristorreservoir computingshort‐term memoryzirconia
Identifiers
PMID42489340
PMCPMC13393266
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