Evidence map›Paper›PMID 42489314›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers.

Donghyeon Han, Chaehyeon Shin, Seok-Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon-Woo Baek, Minseok Kang, Eunseok Kim and 8 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Donghyeon HanDepartment of Materials Science and Engineering, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0009-0001-6889-3293
Chaehyeon ShinSchool of Electrical Engineering, Korea University, Seoul, South Korea.ORCID https://orcid.org/0009-0000-3518-8734
Seok-Jong KimDepartment of Physics, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0000-0001-5108-3625
Yunho JangSchool of Electrical Engineering, Korea University, Seoul, South Korea.ORCID https://orcid.org/0000-0002-5848-1287
Daekyu KohDepartment of Materials Science and Engineering, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0009-0008-3998-8198
Taehwan KimSchool of Electrical Engineering, Korea University, Seoul, South Korea.
Jaeheon JungSchool of Electrical Engineering, Korea University, Seoul, South Korea.
Geon-Woo BaekDepartment of Physics, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0009-0003-2254-0956
Minseok KangDepartment of Materials Science and Engineering, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0009-0007-9164-626X
Eunseok KimDepartment of Materials Science and Engineering, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0009-0004-4183-3858
Geun-Hee LeeDepartment of Physics, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0000-0002-7485-9139
Jeongchun RyuDepartment of Materials Science and Engineering, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0009-0007-3108-4939
Makoto KohdaDepartment of Materials Science, Tohoku University, Sendai, Japan.ORCID https://orcid.org/0000-0002-1995-1282
Junsaku NittaDepartment of Materials Science, Tohoku University, Sendai, Japan.ORCID https://orcid.org/0000-0002-1775-5739
Kab-Jin KimDepartment of Physics, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0000-0002-8378-3746
Jongsun ParkSchool of Electrical Engineering, Korea University, Seoul, South Korea.ORCID https://orcid.org/0000-0003-3251-0024
Kyung-Jin LeeDepartment of Physics, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0000-0001-6269-2266
Byong-Guk ParkDepartment of Materials Science and Engineering, KAIST, Daejeon, South Korea.ORCID https://orcid.org/0000-0001-8813-7025

Funding

National Research Foundation of Korea RS-2022-NR068225National Research Foundation of Korea RS-2023-00261042Samsung Electronics Co., Ltd. IO200721-07533-01Samsung Electronics Co., Ltd. IO201019-07699-01
6 · The paper itself

Abstract

Probabilistic bits (p-bits), non-deterministic classical bits fluctuating between two digital states, constitute a core element in probabilistic computing. This adeptly addresses computationally complex problems, offering some of the envisioned capabilities of quantum computers while mitigating their major challenges such as shielding, cooling, and scalability. A recent study demonstrated the successful integer factorization using nanoscale magnetic tunnel junction (MTJ)-based p-bits. However, their stochasticity originates from the superparamagnetic properties of nanoscale MTJs, rendering p-bits sensitive to the temperature and the dimensions of the device. Here, we demonstrate reliable p-bits based on stochastic spin-orbit torque (SOT) switching in micrometer-sized magnetic trilayers. In a Fe/Ti/CoFeB structure, two spin currents with orthogonal spin polarizations are generated from the Fe/Ti bilayer, and their magnitude and sign determine SOT switching polarity of the top perpendicular CoFeB layer. This enables systematic control of the probability of having a 'UP' magnetization state of the CoFeB by either an external magnetic field or applied current for SOT switching. Furthermore, by harnessing the generated p-bit streams, we effectively demonstrate invertible AND gate operations and stochastic neural networks with improved energy and area efficiency, thus highlighting the potential utility of our p-bits in device applications.

Indexed as

magnetic trilayersorthogonal spin currentsprobabilistic bitsspin‐orbit torque

Identifiers

PMID42489314
PMCPMC13393264

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.