Evidence map›Paper›PMID 42473943›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning.

Yi Li, Jichang Yang, Qunsheng Hou, Songqi Wang, Sishuo Liu, Hangming Zhang, Zijian Ye, Jizhong Jiang, Ning Lin, Xiaoxin Xu and 4 more

Abstract read
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Yi LiDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Jichang YangDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Qunsheng HouSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, China.
Songqi WangDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Sishuo LiuDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Hangming ZhangDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Zijian YeDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Jizhong JiangDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Ning LinDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Xiaoxin XuState Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Dashan ShangState Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Xiaojuan QiDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.
Zhongrui WangSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, China.ORCID https://orcid.org/0000-0003-2264-0677
Han WangDepartment of Electrical and Computer Engineering, The University of Hong Kong, Hong Kong SAR, Hong Kong, China.

Funding

2030 Major Project of the Chinese Ministry of Science and Technology 2021ZD0201200Hong Kong Research Grants Council 17212923Hong Kong Research Grants Council AOE/E-101/23-NHong Kong Research Grants Council C1009-22GHong Kong Research Grants Council C7003-24YHong Kong Research Grants Council T45-701/22RJoint Laboratory of Microelectronics JLFS/E-601/24National Natural Science Foundation of China 62322412National Natural Science Foundation of China 62374181National Natural Science Foundation of China 62488101National Natural Science Foundation of China 92464201National Natural Science Foundation of China U2341218Strategic Priority Research Program of the Chinese Academy of Sciences XDA0330100
6 · The paper itself

Abstract

Resistive memory (RM)-based computing-in-memory (CiM) accelerators provide a promising platform for low-power edge intelligence. However, practical edge AI requires not only efficient inference but also repeated model updates through class-incremental learning (CiL). Implementing CiL on RM substrates exposes a critical material-algorithm mismatch: the write-intensive updates required by CiL are strongly affected by the stochastic programming of filamentary RM devices. Conventional fully programming (FP) mitigates this stochasticity by repeatedly programming and verifying each cell to a precise target conductance, but this exhaustive procedure incurs substantial energy consumption, latency, and device wear across successive CiL stages. Herein, we propose a hardware-aware adaptive programming (AP) strategy that aligns CiL deployment with RM device physics. Microstructural and electrical analyzes reveal that the random spatial distribution of oxygen vacancies gives rise to unavoidable programming variability. Guided by this insight, AP does not attempt to eliminate intrinsic stochasticity through costly compensation. Instead, it updates only the most impactful weights to suppress accuracy loss caused by overall mapping errors, while leaving low-impact weights unchanged. This converts large-scale write-verify operations into targeted updates of a minimal subset of cells, reducing programming overhead without requiring device or material optimization. Validated on a hybrid analog-digital system with a 40 nm, 256 k RM-based CiM core, AP reduces programming energy by 93.0% and programming cycles by more than 90% relative to FP during five-stage CIFAR100 CiL, while achieving a final accuracy of 0.80, close to the 0.81 software baseline. For the more complex ShapeNet 3D point-cloud recognition task across eight stages, AP achieves 92.3% energy savings with only a 0.03 accuracy loss. Moreover, AP improves robustness by reducing programming-error-induced accuracy degradation by 87.7% and 88.4% for the two tasks, respectively. This work bridges algorithmic update requirements and physical programming constraints, enabling robust and energy-efficient lifelong learning on RM-based CiM platforms.

Indexed as

class‐incremental learningcomputing‐in‐memorydeployment strategyresistive memory

Identifiers

PMID42473943
PMCPMC13508753

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.