Evidence map›Paper›PMID 42472458›Full record

ArticleACS applied materials & interfaces2026

Low-Voltage Resistive Switching and Synaptic Plasticity in Cs2AgBiBr6 Memristors.

Zhuang Miao, Ahmed Kadid, Alexander Löwen, Naveen Kolluru, Christian Tückmantel, Timo Maschwitz, Cedric Kreusel, Jamal Aziz, Stefan Janicke, Boqi Wu and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS applied materials & interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Zhuang MiaoInstitute of Smart Sensor Systems, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.ORCID 0009-0002-7656-4825
Ahmed KadidInstitute of Electronic Devices, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.
Alexander LöwenInstitute of Smart Sensor Systems, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.ORCID 0009-0006-2756-7500
Naveen KolluruInstitute of Smart Sensor Systems, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.
Christian TückmantelInstitute of Electronic Devices, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.ORCID 0000-0003-2249-8914
Timo MaschwitzInstitute of Electronic Devices, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.
Cedric KreuselInstitute of Electronic Devices, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.
Jamal AzizInstitute of Smart Sensor Systems, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.
Stefan JanickeInstitute of Smart Sensor Systems, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.
Boqi WuInstitute of Digital and Offset Printing, School of Electrical, Information and Media Engineering, (CM@S), University of Wuppertal, 42119Wuppertal, Germany.
Pang WangInstitute of Electronic Devices, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.ORCID 0000-0002-9666-1422
Thomas RiedlInstitute of Electronic Devices, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.ORCID 0000-0003-1084-316X
Daniel NeumaierInstitute of Smart Sensor Systems, School of Electrical, Information and Media Engineering, University of Wuppertal, 42119Wuppertal, Germany.

Funding

Bundesministerium f?r Bildung und Forschung 13N17113Deutsche Forschungsgemeinschaft HE 2698/11-1Deutsche Forschungsgemeinschaft RI 1551/22-1Deutsche Forschungsgemeinschaft Rl 1551/18-1H2020 Future and Emerging Technologies 101016734
6 · The paper itself

Abstract

Synaptic devices that can store and process data are imperative to mimic the operation of the human brain. In this work, lead-free double perovskite Cs2AgBiBr6 memristors were fabricated on ITO/glass substrates with thermally evaporated Ag top electrodes and systematically investigated for their resistive switching (RS) and neuromorphic functionalities. The devices exhibit stable, low-voltage (+0.239 ± 0.018 V) volatile resistive switching with good cycle-to-cycle reproducibility. A maximum ON/OFF ratio exceeding 105 is maintained for 24 cycles, while values above 102 persist for 1100 cycles. Electrical analysis reveals that the switching behavior is governed by ion migration-induced filament formation, primarily involving mobile Br- ions, VBr+ vacancies, and Ag+ ions injected from the electrode. A detailed conduction model is proposed based on space charge-limited conduction and ion-induced electric field screening. Furthermore, the volatile RS characteristics enable biologically inspired synaptic functions, including spike amplitude-dependent plasticity (SADP), spike number-dependent plasticity (SNDP), and paired-pulse facilitation (PPF) with a maximum facilitation index of 169%, benchmarking competitively among perovskite memristive synapses. Based on experimentally extracted synaptic weight-update rules, an artificial neural network simulation achieved a peak recognition accuracy of 98%.

Indexed as

inorganic halide perovskitelead-free perovskitememristorneuromorphic systemssynaptic plasticity

Identifiers

PMID42472458
PMCPMC13425551

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.