ArticleNature sensors2026
High-fidelity dispersive spin sensing in a tunable unit cell of silicon MOS quantum dots.
Article in Nature sensors, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Radiofrequency cascade readout of coupled spin qubits.Nature electronics · 2026Article
- High-fidelity dispersive spin sensing in a tunable unit cell of silicon MOS quantum dots.Nature sensors · 2026Article
- Compact quantum dot models for analog microwave co-simulation.NPJ quantum information · 2025Article
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Authors and funding
12 authors.
Funding
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Abstract
Metal-oxide-semiconductor (MOS) technology offers a promising route to scalable quantum computing based on spin qubits, but large-scale architectures require compact and sensitive sensors that preserve qubit connectivity and remain compatible with industrial fabrication. Here we demonstrate a dispersive spin-qubit sensor, a single-electron box (SEB), integrated within a bilinear unit cell of planar MOS quantum dots fabricated using an industrial 300-mm wafer process. Independent gate control of the SEB and double-quantum-dot tunnel rates enables optimization of the sensor, achieving state-of-the-art dispersive readout fidelities of 99.92% in 340 μs and 99% in 20 μs. We also develop a hidden Markov model of the two-electron spin dynamics, allowing a more accurate determination of the measurement outcome and corresponding fidelity. Our results show that the compactness and versatility of SEB-based charge sensing can be realized without compromising sensitivity, providing a scalable pathway for future MOS spin-qubit architectures.
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