Evidence map›Paper›PMID 42454633›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Effects of Gamma Irradiation on the Artificial Spiking Neurons Based on NbO

Yihao Wang, Yuanyuan Xue, Siyu Pu, Yufei Liu, Yang Li, Guohe Zhang, Chenrong Gong, Shiquan Fan, Xiaodong Huang, Xin Li and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Yihao WangShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.ORCID https://orcid.org/0009-0005-0320-5938
Yuanyuan XueNational Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
Siyu PuSchool of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, China.
Yufei LiuDepartment of Physics, Xi'an Jiaotong University, Xi'an, Shaanxi, China.
Yang LiShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.
Guohe ZhangShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.
Chenrong GongShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.
Shiquan FanShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.
Xiaodong HuangSchool of Integrated Circuits, Southeast University, Nanjing, China.ORCID https://orcid.org/0000-0003-0303-7821
Xin LiShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.
Weihua LiuShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.ORCID https://orcid.org/0000-0001-5748-3021
Li GengShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.
Chuanyu HanShaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi'an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi'an Jiaotong University, Xi'an, China.ORCID https://orcid.org/0000-0002-4732-0429

Funding

Fundamental Research Funds for the Central Universities xtr062025004National Key Laboratory of Intense Pulsed Radiation Simulation and Effect NKLIPR2526National Key R&D Program of China 2023YFF0717900National Natural Science Foundation of China 62174130National Natural Science Foundation of China 62574161
6 · The paper itself

Abstract

Artificial spiking neurons (ASNs) have attracted significant attention for neuromorphic computing systems intended for deep-space and radiation-rich environments. However, their reliability under ionizing radiation remains largely unexplored. In this work, the effects of gamma-ray irradiation on ASNs based on NbO

Indexed as

artificial spiking neuronGamma‐ray irradiationNbOx memristortotal ionizing dose effects

Identifiers

PMID42454633
PMCPMC13533234

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.