Evidence map›Paper›PMID 42451912›Full record

ArticleMaterials (Basel, Switzerland)2026

Temperature-Adaptive Carrier Regulation and Enhanced Thermoelectric Performance in n-Type PbTe via Deep-Shallow Co-Doping.

Aihua Song, Peng Zhao, Binhao Wang, Dan Wang, Chen Chen, Tao Shen, Hang Li, Bo Xu, Yongjun Tian

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Materials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Aihua SongCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Peng ZhaoCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.ORCID 0009-0006-6576-2489
Binhao WangState Key Laboratory for High Performance Tools, Zhengzhou Abrasive Grinding Research Institute Co., Ltd., Zhengzhou 450001, China.
Dan WangCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Chen ChenCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Tao ShenCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Hang LiCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Bo XuCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.ORCID 0000-0002-9804-1614
Yongjun TianCenter for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Funding

National Key R&D Program of China 2023YFA1406200National Natural Science Foundation of China 52288102National Natural Science Foundation of China 52501294Natural Science Foundation of Hebei Province of China E2025203003Natural Science Foundation of Hebei Province of China E2026203211
6 · The paper itself

Abstract

Optimizing the carrier concentration across the entire operating temperature range is crucial for maximizing the power factor in n-type PbTe. However, conventional shallow donors produce a nearly temperature-invariant electron concentration, leading to an increasingly large deviation from the optimal carrier concentration at elevated temperatures. Herein, we implement a dynamic deep-shallow co-doping strategy by combining iodine (a shallow donor) with gallium (a deep-level donor) in PbTe. The Ga-related deep impurity states thermally ionize at elevated temperatures, providing additional electrons and driving the Hall carrier concentration above ~563 K toward its temperature-dependent optimum. Concurrently, our optimized synthesis preserves a high carrier mobility, which synergistically sustains a remarkable peak power factor of 30 μW·cm

Indexed as

carrier concentrationGa/I co-dopingn-type PbTepower factorthermoelectric materials

Identifiers

PMID42451912
PMCPMC13363260

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.