Evidence map›Paper›PMID 42449001›Full record

ArticleNature materials2026

Topological piezoelectricity in bulk ferroelectrics.

Zheng Wu, Yating Ran, Yuanbo Li, Danyang Wang, Xiaobing Li, Feifei Wang, Anyang Cui, Xiaoming Shi, Yifan Chen, Feilong Yan and 15 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

25 authors.

Zheng Wu *Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.ORCID http://orcid.org/0000-0002-3633-5836
Yating Ran *State Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0009-0003-4202-2769
Yuanbo Li *School of Materials Science and Engineering, School of Interdisciplinary Science, Beijing Institute of Technology (Zhuhai), Beijing Institute of Technology, Beijing, China.
Danyang WangSchool of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, Australia.ORCID http://orcid.org/0000-0002-7883-8001
Xiaobing LiSchool of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, China.
Feifei WangKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China. ffwang@shnu.edu.cn.ORCID http://orcid.org/0000-0001-8502-966X
Anyang CuiKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China. aycui@shnu.edu.cn.ORCID http://orcid.org/0000-0002-2517-8871
Xiaoming ShiDepartment of Physics, University of Science and Technology Beijing, Beijing, China.ORCID http://orcid.org/0000-0001-7332-6835
Yifan ChenState Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China.
Feilong YanKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.
Zhongchen GaoKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.
Zhihua DuanKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.
Liman SaiKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.ORCID http://orcid.org/0000-0001-8710-570X
Xiaomei QinKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.
Tao WangKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.ORCID http://orcid.org/0000-0002-6012-7885
Yanxue TangKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.
Xiangyong ZhaoKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.ORCID http://orcid.org/0000-0002-1525-6661
Qiaozhen ZhangKey Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China.
Jie JiaoState Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.
Haosu LuoState Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0001-5680-9771
Yiu-Wing MaiPolyU-SCUT Joint Research Centre for Advanced and Green Composite Materials, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0002-9141-2793
Fei LiElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and State Key Laboratory for Mechanical Behavior of Materials, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, China.ORCID http://orcid.org/0000-0002-4572-0322
Zibin ChenState Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China. zi-bin.chen@polyu.edu.hk.ORCID http://orcid.org/0000-0002-7144-1861
Houbing HuangSchool of Materials Science and Engineering, School of Interdisciplinary Science, Beijing Institute of Technology (Zhuhai), Beijing Institute of Technology, Beijing, China. hbhuang@bit.edu.cn.ORCID http://orcid.org/0000-0002-8006-3495
Shujun ZhangDepartment of Chemistry, Department of Material Science and Engineering, City University of Hong Kong, Hong Kong, China. s.j.zhang@cityu.edu.hk.ORCID http://orcid.org/0000-0001-6139-6887

Funding

Hong Kong Polytechnic University (Hong Kong PolyU) P0054181, P0042733, and P0039581National Natural Science Foundation of China (National Science Foundation of China) 12374449National Natural Science Foundation of China (National Science Foundation of China) 52172005National Natural Science Foundation of China (National Science Foundation of China) 52372119National Natural Science Foundation of China (National Science Foundation of China) 62175155National Natural Science Foundation of China (National Science Foundation of China) 92463306, 52372100National Natural Science Foundation of China (National Science Foundation of China) U2541261
6 · The paper itself

Abstract

Ferroelectric topological vortex domains have attracted interest for their topologically protected properties and potential in next-generation electronics. Although extensive research has focused on low-dimensional nanostructures, the role of vortex domains in bulk ferroelectrics remains poorly understood. Here we identify topological vortex structures in bulk Pb(Mg

Identifiers

PMID42449001

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.