Evidence map›Paper›PMID 42444714›Full record

ArticleThe journal of physical chemistry. C, Nanomaterials and interfaces2026

Defect States in the Electronic Structure of Ga

Elizaveta Pyatenko, Constantin Wansorra, Ralph Steininger, John Vinson, Wolfram Witte, Dimitrios Hariskos, Michael Powalla, Clemens Heske, Lothar Weinhardt, Dirk Hauschild

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Elizaveta PyatenkoInstitute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Kaiserstraße 12, 76131 Karlsruhe, Germany.ORCID https://orcid.org/0009-0000-9002-9920
Constantin WansorraInstitute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Kaiserstraße 12, 76131 Karlsruhe, Germany.ORCID https://orcid.org/0000-0002-7120-8322
Ralph SteiningerInstitute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Kaiserstraße 12, 76131 Karlsruhe, Germany.
John VinsonMaterial Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States.ORCID https://orcid.org/0000-0002-7619-7060
Wolfram WitteZentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Meitnerstraße 1, 70563 Stuttgart, Germany.ORCID https://orcid.org/0000-0002-9429-506X
Dimitrios HariskosZentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Meitnerstraße 1, 70563 Stuttgart, Germany.ORCID https://orcid.org/0000-0003-4867-1578
Michael PowallaZentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Meitnerstraße 1, 70563 Stuttgart, Germany.
Clemens HeskeInstitute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Kaiserstraße 12, 76131 Karlsruhe, Germany.ORCID https://orcid.org/0000-0001-7586-4549
Lothar WeinhardtInstitute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Kaiserstraße 12, 76131 Karlsruhe, Germany.ORCID https://orcid.org/0000-0003-3361-1054
Dirk HauschildInstitute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Kaiserstraße 12, 76131 Karlsruhe, Germany.ORCID https://orcid.org/0000-0001-9088-8944

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Defect states are crucial in many electronic devices. Oxygen vacancies, for example, are common in transparent conductive oxides and can both be beneficial (e.g., as a dopant to enhance conductivity) as well as detrimental (e.g., leading to reduced device performance by recombination at interfaces). Using soft and hard X-ray photoelectron spectroscopy (PES and HAXPES) with excitation photon energies ranging from 0.1 to 6.3 keV, we study the electronic surface structure of differently processed Ga

Identifiers

PMID42444714
PMCPMC13361068

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.