Evidence map›Paper›PMID 42440031›Full record

ArticleNano-micro letters2026

Elemental Selector for High-Density Memory Integration.

Shaojie Yuan, Pandeng Xuan, Meng Xu, Ming Xu, Xiangshui Miao

Abstract readEditorial
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano-micro letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Shaojie YuanSchool of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
Pandeng XuanYangtze Memory Technology Co., Ltd. (YMTC), Wuhan, 430078, People's Republic of China.
Meng XuDepartment of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong, People's Republic of China. mengxu@hku.hk.
Ming XuSchool of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China. mxu@hust.edu.cn.
Xiangshui MiaoSchool of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Ovonic threshold switching selectors are indispensable for suppressing sneak currents in dense cross-point memories, but most established selector materials still rely on multicomponent chalcogenides with persistent trade-offs in leakage current, reliability, and compositional stability. Recent progress in elemental switching materials is beginning to change this picture. A new study identifies amorphous selenium as a highly effective selector, combining an ultralow leakage current of 4 × 10

Indexed as

Elemental seleniumMonatomic chalcogenOvonic threshold switching selectorPhase-change memoryValence alternation pair

Identifiers

PMID42440031
PMCPMC13365269

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.