ArticleNanomaterials (Basel, Switzerland)2026
Role of Transport Polarity in Transient Electroluminescence of Two-Dimensional TMDC Semiconductors.
Xin Yang, Kai Liu, Rui Huang, Zixing Zou, Chenguang Zhu, Feng Jiang, Ying Chen, Yushuang Zhang, Lei Shan
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In one paragraphArticle in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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9 authors.
Xin YangState Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, School of Physics, Anhui University, Hefei 230601, China.
Kai LiuState Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, School of Physics, Anhui University, Hefei 230601, China.
Rui HuangState Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, School of Physics, Anhui University, Hefei 230601, China.
Zixing ZouSchool of Electronic Information and Electrical Engineering, Changsha University, Changsha 410022, China.
Chenguang ZhuCollege of Materials Science and Engineering, Hunan University, Changsha 410022, China.
Feng JiangState Key Laboratory for Advanced Metals and Materials, University of Science and Technology, Beijing 100083, China.
Ying ChenState Key Laboratory of Pulsed Power Laser Technology, Key Laboratory of Electronic Restriction of Anhui Province, Advanced Laser Technology Laboratory of Anhui Province, College of Electronic Engineering of NUDT, National University of Defense Technology, Hefei 230037, China.ORCID 0009-0002-0006-3274 Yushuang ZhangState Key Laboratory of Pulsed Power Laser Technology, Key Laboratory of Electronic Restriction of Anhui Province, Advanced Laser Technology Laboratory of Anhui Province, College of Electronic Engineering of NUDT, National University of Defense Technology, Hefei 230037, China.ORCID 0000-0002-0026-0844 Lei ShanState Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, School of Physics, Anhui University, Hefei 230601, China.ORCID 0000-0001-9750-2186 Funding
Anhui University Talent Introduction Project S020318030/020College of Electronic Engineering KY22C213College of Electronic Engineering KY24A204National Key R&D Program of China 2024YFA1611103National Natural Science Foundation of China 52402171National Natural Science Foundation of China 52502181National Natural Science Foundation of China 62304256Youth Project of Anhui Provincial Department of Education 2025AHGXZK40419
6 · The paper itselfAbstract
Two-dimensional transient electroluminescent devices have attracted considerable attention owing to their simple device architecture and reduced contact-barrier dependence. However, the influence of semiconductor transport polarity on transient electroluminescence (EL) remains unclear. Here, we compare four representative transition metal dichalcogenide (TMDC) semiconductors with different transport polarities and find that ambipolar WSe
Indexed as
carrier tunnelingelectroluminescencetransition metal dichalcogenidestransport polaritytwo-dimensional materials
Identifiers
PMID42439765
PMCPMC13362784
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