Ion Compensation-Assisted Photolithography Enables High-Resolution Electrolytes for Neuromorphic Transistors.

Wenjing Zhang, Xiaoci Liang, Sixing Chen, Xiuquan Ma, Chen Chen, Songjia Han, Chuan Liu

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Article in Nano-micro letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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7 authors.

Wenjing ZhangState Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.

Xiaoci LiangState Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.

Sixing ChenState Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.

Xiuquan MaGuangdong Provincial Key Laboratory of Digital Manufacturing Equipment, Guangdong HUST Industrial Technology Research Institute, Dongguan, 523000, People's Republic of China.

Chen ChenScience and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, People's Republic of China. angela_chen@nudt.edu.cn.

Songjia HanCollege of Artificial Intelligence and Low-Altitude Technology, South China Agricultural University, Guangzhou, 510642, People's Republic of China. hansongjia@scau.edu.cn.

Chuan LiuState Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China. liuchuan5@mail.sysu.edu.cn.

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No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

High-density organic electrochemical transistor (OECT) arrays are essential for neuromorphic computing and bioelectronic interfaces, but progress has been limited by the low resolution of electrolyte patterning. Although conventional photolithography offers high feature resolution, it involves a fundamental trade-off among spatial resolution, ionic capacitance, and stability in the electrolyte. Here we report an ion compensation-assisted photolithography (ICAP) strategy that yields electrolyte micro-patterns combining high precision, high capacitance and high stability. A molecularly engineered electrolyte forms, under UV exposure, a physicochemical dual cross-linked network with strong solvent resistance and hydrophobicity, which suppresses swelling during both aqueous development and the subsequent ion-compensation step, preserving pattern fidelity. Ion compensation then restores and enhances the mobile-ion content, increasing areal capacitance. The resulting electrolytes achieve a record 2 μm resolution, 15.6 μF cm

Indexed as

ElectrolyteOrganic electrochemical transistorsPhotolithographySynaptic transistor

Identifiers

PMID42437811

DOI10.1007/s40820-026-02288-4

PMCPMC13357476

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