ArticleScience advances2026
All-two-dimensional, ion-gating synaptic transistors for high-temperature and ultralow-energy-consumption neuromorphic applications.
Yonghuang Wu, Xiangpeng Liang, Ting Pan, Chenghui Wu, Wenxin Wang, Jiayuan Chen, Ruixuan Peng, Yuanmin Zhu, Cheng Zhen, Run Shi and 8 more
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In one paragraphArticle in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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5 · Who and what moneyAuthors and funding
18 authors.
Yonghuang WuState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0007-3525-0287 Xiangpeng LiangSchool of Integrated Circuits, Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084, China.ORCID 0000-0001-5243-0457 Ting PanState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0009-5906-896X Chenghui WuState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0007-2353-5365 Wenxin WangState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0002-6268-7015 Jiayuan ChenState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0008-4651-3625 Ruixuan PengState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0002-1905-8264 Yuanmin ZhuResearch Institute of Interdisciplinary Science & School of Materials Science and Engineering, Dongguan University of Technology, Dongguan, Guangdong 523808, China.ORCID 0000-0001-9554-3005 Cheng ZhenEastern Institute for Advanced Study, Eastern Institute of Technology, Ningbo, Zhejiang 315200, China.
Run ShiState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0000-0002-3214-4661 Bochen ZhaoState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Zonglin LiState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0002-6206-9348 Yiqun LiuState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Zhou ZhuState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0009-0003-6875-5653 Jing MaState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0000-0003-0103-9858 Meng Danny GuEastern Institute for Advanced Study, Eastern Institute of Technology, Ningbo, Zhejiang 315200, China.
Jianshi TangSchool of Integrated Circuits, Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084, China.ORCID 0000-0001-8369-0067 Kai LiuState Key Laboratory of New Ceramic Materials, and Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.ORCID 0000-0002-0638-5189 Funding
No grant is acknowledged in the PubMed record.
6 · The paper itselfAbstract
High-temperature intelligent devices operating above 125°C are crucial for applications where cooling is insufficient or impossible. Synaptic transistors, as an intelligent hardware in neuromorphic computing, allow multifunctionality and precise control of channel conductance, but they face challenges in achieving low energy consumption and optimal performance at high temperatures. This study introduces an all-two-dimensional (2D) high-temperature ion-gating synaptic transistor (A2D-HTIGST) using tungsten disulfide (WS
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PMID42430463
PMCPMC13353368
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