Evidence map›Paper›PMID 42429063›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Interface Engineering for Scalable Optoelectronic Reservoir Computing.

Kun Zheng, Yixiao Li, Tong Li, Changde Luo, Yi Wang, Yutao Song, Chan Ye, Sanxia Yin, Xuming Zou, Lei Liao and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Kun ZhengCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Yixiao LiCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Tong LiSchool of Physics and Electronics, Hunan University, Changsha, China.
Changde LuoCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Yi WangCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Yutao SongCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Chan YeCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Sanxia YinCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Xuming ZouSchool of Physics and Electronics, Hunan University, Changsha, China.ORCID https://orcid.org/0000-0003-4553-6338
Lei LiaoCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.
Rong YangCollege of Semiconductors (College of Integrated Circuits), National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, Changsha Semiconductor Technology and Application Innovation Research Institute, Hunan University, Changsha, Hunan, China.ORCID https://orcid.org/0000-0003-2216-7584

Funding

National Key Research and Development Program of China 2022YFB4400100National Natural Science Foundation of China 62122084National Natural Science Foundation of China 92477102Songshan Lake Materials Laboratory 2023SLABFK09 111 Center B25033
6 · The paper itself

Abstract

Two-dimensional (2D) materials offer an attractive platform for optoelectronic reservoir computing (RC) and neuromorphic hardware, promising energy-efficient in-sensor processing for edge intelligence. However, scaling such systems to practical large-scale arrays is hindered by substantial device-to-device variability due to the stochastic distribution of intrinsic defects in these materials. Here, we demonstrate a scalable and highly uniform reservoir array based on vertical p-GaN/n-MoS

Indexed as

2D materialsdefectsGaNinterface engineeringneuromorphic computingoptoelectronic reservoirthermal pretreatment

Identifiers

PMID42429063
PMCPMC13533261

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.