Evidence map›Paper›PMID 42424645›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Intrinsic and External Factors Influencing the Ultralarge Elasticity of Silicon Nanowires.

Tanglong Bai, Bokang Wang, Yurui Xing, Haolin Huang, Huixin Chen, Hongti Zhang

Abstract read
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Tanglong BaiSchool of Physical Science and Technology, Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, P. R. China.
Bokang WangSchool of Physical Science and Technology, Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, P. R. China.
Yurui XingSchool of Physical Science and Technology, Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, P. R. China.
Haolin HuangSchool of Physical Science and Technology, Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, P. R. China.
Huixin ChenState Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, China.ORCID https://orcid.org/0000-0002-6063-2064
Hongti ZhangSchool of Physical Science and Technology, Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, P. R. China.ORCID https://orcid.org/0000-0002-4051-2655

Funding

Centre for High-resolution Electron Microscopy (CℏEM) EM02161943National Natural Science Foundation of China 11902200National Natural Science Foundation of China 12372113ShanghaiTech University and the Shanghai Science and Technology Plan 19YF1433600ShanghaiTech University and the Shanghai Science and Technology Plan 21DZ2260400
6 · The paper itself

Abstract

Silicon remains the cornerstone in today's immense semiconductor industry. At the nanoscale, silicon could exhibit large elasticity, which holds great potential for flexible electronics and 'elastic strain engineering'. Here, we report the influence of crystalline orientation, specimen size, strain rate, and electron beam irradiation on the ultra large (>10%) elastic deformation and fracture behavior of VLS-grown single crystalline silicon nanowires (Si NWs), and demonstrated that Si NWs grown along <110> directions exhibited greater strength and deformability than those along <111>. As the specimen diameters decreased, the fracture strength and strain of Si NWs doubled, and smaller specimens tended to 'fly away' upon fracture due to the substantial accumulated elastic potential energy. Results indicate that the intricate mechanical properties of Si NWs are susceptible to multiple intrinsic and extrinsic factors. By strategically manipulating the specific variables, the mechanical robustness and deformation tolerance of Si NW-based electronic devices can be tailored.

Indexed as

large elasticitymechanical anisotropysilicon nanowiressize effectultra‐strength

Identifiers

PMID42424645
PMCPMC13548982

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.