Evidence map›Paper›PMID 42420498›Full record

ArticleNature materials2026

Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi

Su Sun, Chuan Xu, Keqiang Ji, Yuexing Xia, Bo Tong, Jinmeng Tong, Chen Chen, Wenqin Zhao, Duanliang Zhou, Qinghe Wang and 13 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

23 authors.

Su Sun *Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Chuan Xu *Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Keqiang JiShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Yuexing XiaCAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, People's Republic of China.
Bo TongShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Jinmeng TongShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Chen ChenShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Wenqin ZhaoCollege of Advanced Interdisciplinary Studies, Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, People's Republic of China.
Duanliang ZhouState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, People's Republic of China.
Qinghe WangState Key Lab for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0002-7427-2354
Lixin YangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Qiang WangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Miaomiao LiCollege of Advanced Interdisciplinary Studies, Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, People's Republic of China.
Biyuan ZhengCollege of Advanced Interdisciplinary Studies, Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, People's Republic of China.ORCID http://orcid.org/0000-0003-4820-7038
Lai-Peng MaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.
Xinfeng LiuCAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0002-7662-7171
Zhibo LiuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.ORCID http://orcid.org/0000-0002-9944-2129
Mengjian ZhuCollege of Advanced Interdisciplinary Studies, Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, People's Republic of China.ORCID http://orcid.org/0000-0002-7863-2660
Kaihui LiuState Key Lab for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0002-8781-2495
Peng LiuState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, People's Republic of China.
Kaili JiangState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0002-1547-5848
Hui-Ming ChengShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China.ORCID http://orcid.org/0000-0002-5387-4241
Wencai RenShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China. wcren@imr.ac.cn.ORCID http://orcid.org/0000-0003-4997-8870

Funding

National Natural Science Foundation of China (National Science Foundation of China) 22325301National Natural Science Foundation of China (National Science Foundation of China) 52122202National Natural Science Foundation of China (National Science Foundation of China) 52188101National Natural Science Foundation of China (National Science Foundation of China) 52272050National Natural Science Foundation of China (National Science Foundation of China) 52472052Youth Innovation Promotion Association of the Chinese Academy of Sciences (Youth Innovation Promotion Association CAS) 2021000185
6 · The paper itself

Abstract

Single-crystal wafers of p-type two-dimensional (2D) semiconductors are highly desired for next-generation electronics. However, p-type 2D semiconductors remain scarce, and achieving wafer-scale monolayer single crystals of such materials is even more challenging. Here we report the wafer-scale growth of p-type semiconducting monolayer MoSi

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.