Evidence map›Paper›PMID 42397175›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Anion-Engineered Organic Electrochemical Transistors With Multi-Timescale Synaptic Dynamics for Task-Adaptive Spiking Neural Networks.

Ziyu Wan, Jiakun Xue, Guowei Liu, Jiaqi Ding, Yu Zhang, Zhenqi Gong, Chengyuan Peng, Wenpei Shi, Jiale Su, Shuyu Liu and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Ziyu WanNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Jiakun XueNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Guowei LiuNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Jiaqi DingKey Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.
Yu ZhangNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Zhenqi GongNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Chengyuan PengNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Wenpei ShiNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Jiale SuNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Shuyu LiuNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Jiangnan XiaNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Huipeng ChenInstitute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, China.ORCID https://orcid.org/0000-0003-1706-3174
Lang JiangDepartment of Polymer Materials and Engineering, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, China.ORCID https://orcid.org/0000-0003-3624-1618
Lei LiaoNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Yuanyuan HuNational Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.ORCID https://orcid.org/0000-0001-8511-1401

Funding

111 Center B25033Hunan Provincial Natural Science Foundation 2026JJ20008National Key Research and Development Program 2021YFA1200700National Natural Science Foundation of China 92577207National Natural Science Foundation of China T2225028
6 · The paper itself

Abstract

Biological synapses process complex temporal information through a diverse range of excitatory postsynaptic current (EPSC) decay scales. However, conventional neuromorphic hardware often employs homogeneous synaptic models, limiting its capacity for multi-scale temporal tasks. Here, we present a material-to-system co-design strategy to emulate biological temporal heterogeneity using anion-engineered organic electrochemical transistors (OECTs). By tailoring the anion species within a solid-state ion-gel electrolyte utilizing BF

Indexed as

anion engineeringexcitatory postsynaptic potentialNeuromorphic computingorganic electrochemical transistorsspiking neural networksynaptic dynamics

Identifiers

PMID42397175
PMCPMC13509054

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.