Evidence map›Paper›PMID 42396037›Full record

ArticleACS omega2026

Polarity Inversion-Driven Band Structure Modulation, Strain Engineering, and Electrical Property Analysis on GaN/4H-SiC Heterojunctions.

Jin Yang, Gang Shi, Luye Yao, Ye Li, Mengchao Du, Shuyu Cui, Peipei Li, Yue Liu, Jiachen Bi, Huiyun Wei and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS omega, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Jin YangSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.ORCID https://orcid.org/0009-0004-4245-4999
Gang ShiSchool of Information Engineering, Nanyang institute of Technology, Nanyang 473004, China.
Luye YaoSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.
Ye LiInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Mengchao DuInstitute of Advanced Semiconductor Optoelectronic Technology, Beijing University of Technology, Beijing 100124, China.ORCID https://orcid.org/0009-0009-9515-5446
Shuyu CuiSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.
Peipei LiSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.
Yue LiuSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.
Jiachen BiCollege of New Materials, National University of Science & Technology (MISIS), Moscow 119049, Russian Federation.
Huiyun WeiSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.
Mingzeng PengSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.ORCID https://orcid.org/0000-0002-3563-4797
Xinhe ZhengSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The 4H-SiC/GaN heterojunction, with its excellent electrical properties, is highly promising for advanced semiconductor devices. This study delves into four heterojunction structures (01-C-Si-Ga-N, 02-C-Si-N-Ga, 03-Si-C-Ga-N, and 04-Si-C-N-Ga) with varying polarity configurations, analyzing their electronic and electrical characteristics. The results reveal notable differences in the band structures of the four designs: structures 01 and 03 exhibit direct band gaps, while structures 02 and 04 display indirect band gaps. In structures 01 and 04, the valence bands become degenerate, resulting in the overlap of the valence band in the heterojunction. Structures 02 and 03 represent typical type-II heterojunction band structures. Structure 03 displays a symmetric electron distribution, which may lead to a smaller deformation potential and enhanced electron mobility, reaching 18 527.2 cm

Identifiers

PMID42396037
PMCPMC13325384

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.