Evidence map›Paper›PMID 42394616›Full record

ArticleSmall methods2026

Dual-Sided Interface Optimization Enables High-Brightness All-Solution-Processed ZnMgO-Based Green Perovskite QLEDs.

Hailong Feng, Yunqian Zhao, Feilong Yu, Xiangyu Liu, Chaofang Zheng, Gaoke Liu, Yan Fang, Guangguang Huang, Zuliang Du

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Hailong FengNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Yunqian ZhaoNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Feilong YuNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Xiangyu LiuNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Chaofang ZhengNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Gaoke LiuNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Yan FangNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Guangguang HuangNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Zuliang DuNational & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.ORCID https://orcid.org/0000-0003-3563-599X

Funding

Deputy Director of Science and Technology of Henan Province HNFZ20240584National Key Research and Development Program of China 2022YFB3602901Natural Science Foundation of China 62204076Natural Science Foundation of China 62234006Yellow River Scholar of Henan University
6 · The paper itself

Abstract

The degradation of the underlying perovskite quantum dot (PQD) layers by the ZnMgO ink hinders the performance of all-solution-processed perovskite quantum dot light-emitting diodes (P-QLEDs). Herein, a novel dual-sided interface optimization is proposed for the fabrication of P-QLEDs: (i) cross-locking PQD surface ions with a robust zwitterionic ligand to boost their chemical and solvent tolerance; (ii) improving ink orthogonality via optimizing the solvent of ZnMgO to acetonitrile and eliminating residual hydroxyl groups from the ZnMgO surface. As a result, the ZnMgO is deposited on the PQD films without causing serious degradation, leading to improved carrier injection and radiative recombination. The optimized P-QLEDs achieve a maximum luminance of 134 920 cd m

Indexed as

electroluminescenceperovskite nanocrystalssurface chemistryZnMgO

Identifiers

PMID42394616
PMCPMC13450353

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.