ArticleNano letters2026
Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.
Article in Nano letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scalable quantum photonics. However, ultrathin axial quantum-emitter formation is often hindered by facet-dependent growth dynamics and rotational twins, which induce lateral overgrowth and compromise interface abruptness. Here, we develop InGaAs-based quantum emitters by tailoring facet evolution via dilute Sb incorporation, which efficiently suppresses twins and promotes confined axial insertion at the growth-front facet. This approach significantly enhances the probability of obtaining abrupt, few-nanometer-thin quantum dots at the nanowire tip. Single-nanowire optical spectroscopy reveals intense, spatially localized emission from the active region with lifetimes as short as (0.51 ± 0.02) ns, and second-order photon-correlation measurements consistently exhibit pronounced antibunching with
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