Evidence map›Paper›PMID 42387363›Full record

ArticleSmall methods2026

Optimizing the Development Process in Direct Photolithography for Efficient PeLEDs.

Kaipeng Wu, Xiaofang Zhu, Yun Gao, Junjie Si, Yongqing Bai, Fei Zhuge, Xingliang Dai, Zhizhen Ye

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Kaipeng WuSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Xiaofang ZhuSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Yun GaoSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Junjie SiCollege of Optical and Electronic Technology, China Jiliang University, Hangzhou, China.
Yongqing BaiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Fei ZhugeNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China.
Xingliang DaiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0001-5288-9700
Zhizhen YeSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0002-0886-0115

Funding

China National Postdoctoral Program for Innovative Talents BX20250312Major Project of the Zhejiang Natural Science Foundation LD25F040006National Natural Science Foundation of China 52503323National Natural Science Foundation of China U22A20133
6 · The paper itself

Abstract

High-resolution perovskite nanocrystals light-emitting diodes (PeLEDs) show great potential for near-eye and metaverse displays due to their exceptional optoelectronic performance. Direct photolithography stands as a leading approach for high-resolution pixelation, but patterned devices still suffer from severe performance deterioration. Herein, by integrating high-efficient perovskite nanocrystals and damage-free carbene-based crosslinkers, we reveal the development process as a critical yet overlooked factor influencing pixelated device performance remarkably. The interfacial adhesion between perovskite nanocrystals and the hole transport layer (HTL) dictates both patterning fidelity and residual-induced background emission. Excessively strong adhesion leads to incomplete development, while weak adhesion compromises pattern integrity. Additionally, conventional developers cause unselective dissolution damage, inevitably degrading the optoelectronic properties of crosslinked perovskite nanocrystals. By synergistically optimizing the HTL to regulate adhesion strength and tailoring the developer with butyric acid for in situ perovskite nanocrystals surface passivation, we minimize development-induced damage while maintaining clean pattern definition. This integrated optimization yields high-resolution (5080 PPI) PeLED arrays with a record external quantum efficiency of 20% and a peak luminance of 3061 cd m

Indexed as

adhesion strengthdevelopment processdirect photolithographylight‐emitting diodespixelated arrays, perovskite quantum dots

Identifiers

PMID42387363
PMCPMC13450173

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.