Evidence map›Paper›PMID 42387050›Full record

ArticleNature materials2026

Quantum tunnelling and leakage current across two-dimensional materials.

Yue Yuan, Francesco Maria Puglisi, Andrea Padovani, Christoph Reuter, Tingting Han, Daria Belotcerkovtceva, Iakov Reznikov, Alexey Berdyugin, Yaqing Shen, Mahdi Pourfath and 7 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Yue YuanDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Francesco Maria PuglisiDepartment of Engineering 'Enzo Ferrari' (DIEF), University of Modena and Reggio Emilia, Modena, Italy.ORCID http://orcid.org/0000-0001-6178-2614
Andrea PadovaniDepartment of Science and Methods for Engineering (DISMI), University of Modena and Reggio Emilia, Reggio Emilia, Italy.ORCID http://orcid.org/0000-0003-1145-5257
Christoph ReuterDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Tingting HanDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Daria BelotcerkovtcevaDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0001-7541-9023
Iakov ReznikovDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Alexey BerdyuginDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0002-7537-6227
Yaqing ShenMaterials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
Mahdi PourfathInstitute for Microelectronics (TU Wien), Vienna, Austria.ORCID http://orcid.org/0000-0002-8053-578X
Theresia KnoblochInstitute for Microelectronics (TU Wien), Vienna, Austria.ORCID http://orcid.org/0000-0001-5156-9510
Marco A VillenaDepartamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Granada, Spain.ORCID http://orcid.org/0000-0001-5547-3380
Lukas VölkelChair of Electronic Devices, RWTH Aachen University, Aachen, Germany.ORCID http://orcid.org/0000-0002-8138-9980
Max C LemmeChair of Electronic Devices, RWTH Aachen University, Aachen, Germany.ORCID http://orcid.org/0000-0003-4552-2411
Tibor GrasserInstitute for Microelectronics (TU Wien), Vienna, Austria.ORCID http://orcid.org/0000-0001-6536-2238
Deji AkinwandeMicroelectronics Research Center, The University of Texas at Austin, Austin, TX, USA.ORCID http://orcid.org/0000-0001-7133-5586
Mario LanzaDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore. mlanza@nus.edu.sg.ORCID http://orcid.org/0000-0003-4756-8632

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Leakage current is a physical phenomenon that critically affects the operation and reliability of mainstream electronic devices and heterostructures for diverse applications. Two-dimensional materials are being integrated into the structure of ultrascaled electronic devices, but the leakage current across them is still not well understood. Here we analyse the leakage current across hexagonal boron nitride (hBN), molybdenum disulfide and tungsten disulfide of different thicknesses, and compare it with industrial-quality SiO

Identifiers

PMID42387050

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.