Evidence map›Paper›PMID 42386708›Full record

ArticleLight, science & applications2026

Dual-mode switchable and reconfigurable Van der Waals phototransistor for multi-state image encryption.

Yuanfang Yu, Senyao Tang, Nanjie Jiang, Yuwei Zhang, Xiaorui Jin, Jiaxin Gong, Huijuan Zhao, Anran Wang, Dongyang Wan, Zhenhua Ni and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Light, science & applications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Yuanfang YuState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
Senyao TangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
Nanjie JiangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.ORCID http://orcid.org/0009-0007-6752-5644
Yuwei ZhangSchool of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, China.ORCID http://orcid.org/0009-0005-2520-3589
Xiaorui JinState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
Jiaxin GongSchool of Science, Jiangsu Key Laboratory of Quantum Computing Science and Devices, Nanjing University of Posts and Telecommunications, Nanjing, China.ORCID http://orcid.org/0009-0006-2650-8314
Huijuan ZhaoState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
Anran WangSchool of Science, Jiangsu Key Laboratory of Quantum Computing Science and Devices, Nanjing University of Posts and Telecommunications, Nanjing, China.
Dongyang WanSchool of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, China.ORCID http://orcid.org/0000-0001-6810-2183
Zhenhua NiSchool of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, China.ORCID http://orcid.org/0000-0002-6316-2256
Xinran WangSchool of Integrated Circuits, Nanjing University, Suzhou, China.ORCID http://orcid.org/0000-0002-3975-1667
Li GaoState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China. iamlgao@njupt.edu.cn.ORCID http://orcid.org/0000-0001-6362-5487

Funding

Basic Research Program of Jiangsu Province BG2024017, BK20243057, BK20232044Basic Research Program of Jiangsu Province BK20240643National Natural Science Foundation of China (National Science Foundation of China) 62505144National Natural Science Foundation of China (National Science Foundation of China) U24A20295，62288102, 62375139
6 · The paper itself

Abstract

Switchable phototransistors equipped with high-sensitivity, dynamic encryption, low-power consumption, and CMOS processing compatibility are key components for optoelectronic encryption chips. Two-dimensional van der Waals (vdWs) heterostructures provide a solution toward this goal, despite continued efforts, excessive dependence on gate voltage modulation, multi-wavelength excitation and polarization modulation causes unsolved issues of high-power operation, channel interference and limited integration level, respectively. Here, we demonstrate a dual-mode vdWs phototransistor based on PtTe

Identifiers

PMID42386708
PMCPMC13324172

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.