Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement.

Jingkai Zhao, Changcai Zuo, Lidong Zhang, Haozhe Gao, Yuliang Liu, Gaoqiang Deng, Xiaohang Li, Yuantao Zhang

Abstract read

In one paragraph

Article in Light, science & applications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

8 authors.

Jingkai Zhao *State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.

Changcai Zuo *State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.

Lidong ZhangState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.

Haozhe GaoState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.

Yuliang LiuState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.

Gaoqiang DengState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China. denggq@jlu.edu.cn.

Xiaohang LiAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia. xiaohang.li@kaust.edu.sa.ORCID http://orcid.org/0000-0002-4434-365X

Yuantao ZhangState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China. zhangyt@jlu.edu.cn.ORCID http://orcid.org/0000-0002-8671-6979

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62474080National Natural Science Foundation of China (National Science Foundation of China) U22A20134National Natural Science Foundation of China (National Science Foundation of China) U24A20300

6 · The paper itself

Abstract

Weak polarization electric field (PEF) III-nitride LEDs provide a promising pathway toward high-performance micro-LEDs for next-generation displays and wearable devices. To realize this promise, improving the efficiency of weak-PEF LEDs is crucial, as it remains the central requirement for next-generation optoelectronic applications. Here, we demonstrate record-high efficiency weak-PEF LEDs on polar c-plane with InGaN/AlGaN digital alloy (DA) superlattice barriers, enabled by optimized pulse-growth mode of metal-organic chemical vapor deposition (MOCVD). In addition, we reveal strong lateral carrier confinement in these LEDs. We improve the structural quality and optical performance of weak-PEF InGaN/DA multiple quantum wells (MQWs) by optimizing the pulse-growth conditions. Further, we realize weak-PEF DA-based blue LEDs with peak external quantum efficiency up to 15%, which is the highest value in current studies of its kind. Importantly, weak-PEF DA-based LEDs have strong lateral carrier confinement, leading to less efficiency degradation from sidewall effects than conventional GaN-based MQWs LEDs. This work represents a meaningful step toward high-performance weak-PEF III-nitride LEDs, particularly for micro-LED applications where both efficiency and carrier confinement are critical.

Identifiers

PMID42386698

DOI10.1038/s41377-026-02359-6

PMCPMC13324002

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.