Evidence map›Paper›PMID 42384819›Full record

ArticleScience advances2026

Antiferroelectric thin films embedded with ferroelectric switching loop for giant negative electrocaloric effect.

Peipei Su, Jianchu Chen, Junning Li, Jinbin Wang, Zhenzhong Yang, Yongshuai Ge, Ke Qu, Xiangli Zhong, Gaokuo Zhong

Abstract read
In one paragraph

Article in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Peipei SuKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.ORCID 0009-0003-2687-8516
Jianchu ChenKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China.
Junning LiChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.ORCID 0000-0001-6012-8258
Jinbin WangKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
Zhenzhong YangKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China.ORCID 0000-0002-7226-7973
Yongshuai GeShenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China.ORCID 0000-0002-2415-8430
Ke QuKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China.ORCID 0009-0007-5711-9191
Xiangli ZhongKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.ORCID 0000-0003-1520-3567
Gaokuo ZhongChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.ORCID 0000-0003-4238-2759

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The ferroics combine the single-hysteresis loop of ferroelectrics with the double-hysteresis loop of antiferroelectrics to form multiple hysteresis loops, which could substantially advance energy storage, electrocaloric cooling, and nonvolatile multistate memory technologies. However, the intentional stabilization of intermediate states that bridge the nonvolatility of ferroelectrics and the field-induced phase transition behavior of antiferroelectrics remains a fundamental challenge. Here, we propose a strategy for preparing lead zirconate (PbZrO

Identifiers

PMID42384819
PMCPMC13322268

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.