ReviewNational science review2026
Post-Moore two-dimensional integrated electronics for angstrom-nodes.
Review in National science review, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
As integrated circuits approach the angstrom-nanometer nodes in recent years, the continued downscaling of silicon-based electronics faces fundamental physical limits and escalating manufacturing costs. Two-dimensional (2D) materials-characterized by their atomic thickness, exceptional electrostatic gate control, and inherent suitability for heterogeneous integration-have arisen as promising alternatives to extend device scaling beyond the limits of silicon technology. This review provides a systematic overview of advances in integrated electronics based on 2D materials. The discussion begins with recent developments in wafer-scale synthesis and transfer techniques for 2D semiconductors. Subsequently, progress in high-performance 2D transistors is discussed, focusing on gate dielectric integration, contact optimization, and scaling strategies for high-density and advanced-node configurations. Circuit- and system-level implementations are also surveyed, including logic, memory, and three-dimensional (3D) monolithic integration. Further, key challenges and prospective directions are highlighted for realizing scalable, manufacturable, and low-power 2D electronic systems at the angstrom-nodes.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.